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| DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES * High power gain * High output voltage * High maximum junction temperature * Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. PINNING PIN 1 2 3 4 collector emitter base emitter Fig.1 SOT172A2. DESCRIPTION Top view 2 MSA457 BFQ621 DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties. handbook, halfpage 4 1 3 QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM VO PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Tmb = 25 C IC = 120 mA; VCE = 18 V; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f(p + q - r) = 793.25 MHz; dim = -60 dB; RL = 75 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. CONDITIONS open base - - - 40 - - - MIN. - - - - 7 18.5 1.2 TYP. MAX. 16 150 8 - - - - GHz dB V UNIT V mA W 1995 Sep 26 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS open emitter open base open collector - - - - - -65 - MIN. BFQ621 MAX. 25 16 2 150 8 +175 +200 V V V UNIT mA W C C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER CONDITIONS VALUE 21.9 UNIT K/W thermal resistance from junction to mounting base Ptot = 8 W; up to Tmb = 25 C 1995 Sep 26 3 Philips Semiconductors Product specification NPN 7 GHz wideband transistor CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Ce Cre GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IE = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 18 V IC = 50 mA; VCE = 10 V IC = 120 mA; VCE = 18 V; f = 1 GHz; see Fig.3 IE = ie = 0; VCB = 18 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz - - - - 50 - - - MIN. - - - - - 7 1.5 5 0.85 18.5 14.5 1.35 1.2 -60 -60 TYP. BFQ621 MAX. 25 16 2 100 160 - - - 1.2 - - - - - - UNIT V V V A GHz pF pF pF dB dB V V dB dB collector-emitter breakdown voltage IC = 10 mA; IB = 0 IC = 0; VCE = 18 V; f = 1 MHz; - see Fig.4 IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 C; IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 C; - - - - - - VO d2 output voltage second order intermodulation distortion note 2 note 3 note 4 note 5 Notes s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. dim = -60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; Vp = VO; fp = 445.25 MHz; Vq = VO -6 dB; fq = 453.25 MHz; Vr = VO -6 dB; fr = 455.25 MHz; measured at f(p + q - r) = 443.25 MHz; see Fig.5. 3. dim = -60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; Vp = VO; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at f(p + q - r) = 793.25 MHz; see Fig.6. 4. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; measured at f(p + q) = 450 MHz; see Fig.7. 5. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; measured at f(p + q) = 810 MHz; see Fig.8. 1995 Sep 26 4 Philips Semiconductors Product specification NPN 7 GHz wideband transistor MEA260 BFQ621 handbook, full pagewidth L2 10 nF 10 k 240 L5 10 nF L1 10 nF L4 L3 L6 10 nF 4.7 F VCC VBB input 75 10 nF DUT 1 pF output 75 1 pF 33 33 MEA260 L1 = 8 nH. L2 = 15 nH, 2 turns copper wire, internal diameter 2 mm. L3 = 10 nH, 2 turns copper wire, internal diameter 1.5 mm. L5: Lp = 21 mm; Rc = 75 . L6: Lp = 16 mm; Rc = 75 . Fig.2 Intermodulation distortion and second order distortion MATV test circuit. handbook, halfpage 10 MLC991 fT (GHz) handbook, halfpage 2.0 MLC990 C re (pF) 8 1.5 6 1.0 4 0.5 2 0 0 50 100 150 I C (mA) 200 0 0 5 10 15 20 25 V CB (V) VCE = 18 V; f = 1 GHz. IC = 0; f = 1 MHz. Fig.3 Transition frequency as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 1995 Sep 26 5 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 handbook, halfpage 0 MLC992 handbook, halfpage 0 MLC993 d im (dB) 20 d im (dB) 20 40 40 60 60 80 0 50 100 150 I C (mA) 200 80 0 50 100 150 I C (mA) 200 VO = 1.35 V; VCE = 18 V; f(p + q - r) = 443.25 MHz; see Fig.2. VO = 1.2 V; VCE = 18 V; f(p + q - r) = 793.25 MHz; see Fig.2. Fig.5 Intermodulation distortion as a function of collector current; typical values. Fig.6 Intermodulation distortion as a function of collector current; typical values. handbook, halfpage 0 MLC994 handbook, halfpage 0 MLC995 d2 (dB) 20 d2 (dB) 20 40 40 60 60 80 0 50 100 I C (mA) 150 80 0 50 100 I C (mA) 150 VO = 50dBmV = 316 mV; VCE = 18 V; f(p + q) = 450 MHz; see Fig.2. VO = 50dBmV = 316 mV; VCE = 18 V; f(p + q) = 810 MHz; see Fig.2. Fig.7 Second order distortion as a function of collector current; typical values. Fig.8 Second order distortion as a function of collector current; typical values. 1995 Sep 26 6 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 3 GHz 0.2 5 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 40 MHz 5 0.5 135 o 1 2 45 o MLC996 1.0 90 o VCE = 18 V; IC = 120 mA; Zo = 50 . Fig.9 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 10 0o 135 o 45 o 90 o VCE = 18 V; IC = 120 mA. MLC997 Fig.10 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 26 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 90 o handbook, full pagewidth 135 o 45 o 3 GHz 40 MHz 0.5 0.4 0.3 0.2 0.1 180 o 0o 135 o 45 o 90 o VCE = 18 V; IC = 120 mA. MLC998 Fig.11 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 3 GHz 40 MHz 0.2 5 1 2 5 0o 0 0.2 5 0.5 135 o 1 2 45 o MLC999 1.0 90 o VCE = 18 V; IC = 120 mA; Zo = 50 . Fig.12 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 26 8 Philips Semiconductors Product specification NPN 7 GHz wideband transistor SPICE parameters for the BFQ621 crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1995 Sep 26 9 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 1.358 112.2 0.991 78.06 4.291 643.3 1.851 5.776 0.999 2.350 50.26 2.454 1.175 8.000 1.000 8.000 1.585 1.880 0.000 1.110 3.000 3.985 0.600 0.327 14.02 398.1 2.940 3.084 45.00 1.529 0.216 0.158 0.120 9.070 0.000 750.0 0.000 0.735 UNIT fA - - V A fA - - - V mA fA - A - eV - pF V - ps - mV A deg pF V - - ns F mV - - List of components (see Fig.13) DESIGNATION Cbe Ccb Cce L1(1) L2(1) L3(1) L4(1) L5(1) L6(1) LB LE Note 225 36 362 L = 1.37; W = 2.64 L = 1.60; W = 2.64 L = 0.51; W = 0.33 L = 0.81; W = 2.06 L = 2.77; W = 0.33 L = 0.94; W = 2.06 1.85 1.22 VALUE E L4 L6 C be L3 L5 L1 B LB B' E' LE C' L2 handbook, halfpage BFQ621 Ccb C Cce MLD001 Fig.13 Package equivalent circuit SOT172A2. UNIT fF fF fF mm mm mm mm mm mm nH nH 1. The micro striplines are on a double copper-clad substrate; r = 6.5; h = 1.18 mm. Philips Semiconductors Product specification NPN 7 GHz wideband transistor PACKAGE OUTLINE BFQ621 handbook, full pagewidth 4 8.5 min (4x) 2.9 0.13 0.9 (2x) 0.6 24 22 1.5 1 8 - 32 UNC 5.25 5.35 max max 3 90o 2 1.70 1.35 (2x) 24 22 11.8 10.8 2.9 2.3 5.2 max 6.9 min MBC866 Dimensions in mm. Fig.14 SOT172A2. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1995 Sep 26 10 |
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